FEATURES
- The world’s smallest low current consumption for crystal built-in oscillator.
0.35μA typ.(VDD=1.8V) - Small size package (2.0×1.2mm)
- Pb-free RoHS compliant
- Built-in crystal resonator processed by high reliable photo-lithograhic technology.
Specifications
Item | Symbol | Specifications | Conditions Note |
---|---|---|---|
Nominal Frequency | f_nom | 32.768kHz | |
Frequency tolerance | f_tol | ±20 x 10-6 | |
Supply Voltage | VDD | 1.2~5.5V | |
Storage temperature | T_stg | -55 〜 +125ºC | |
Operating temperature | T_use | -40 〜 +85ºC | |
Turnover Temperature | Ti | +25±5ºC | |
Frequency temperature coefficient | β | (−0.030±10%) x 10-6/ºC2 | |
Frequency / voltage coefficient | f0_VDD | ±1×10-6/V | VDD=1.2 to 5.5V |
Current consumption | IDD |
0.35 typ. / 0.65 max. μA | VDD=1.8V,
No load condition |
0.50 typ. / 0.80 max. μA | VDD=3.3V,
No load condition |
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Sleep current | IDD2 | 0.25 typ. / 0.60 max. μA | VDD=1.2 to 5.5V,
No load condition |
Symmetry | SYM | 50±10 % | Load:15pF |
Rise time / Fall time | tr/tf | 200ns Max. | Load:15pF output level 10 to 90% |
Input voltage | VIL | 0.2VDD max. V | INHN terminal |
VIH | 0.8VDD min. V | INHN terminal | |
Output voltage | VoL | 0.4 max. V | Q terminal |
VoH | VDD-0.4 min. V | Q terminal | |
Output load condition (CMOS) | CLOUT | 15 max. pF | CMOS Loading |
Start-up time | t_str | 0.15 Typ. / 0.50 max. | VDD=1.2 to 5.5V |
Frequency aging | f_aging | ±3 x 10-6 | First year |
Unless otherwise stated, characteristics (specifications) shown in the above table are based on the Ta=+25℃、VDD=3.3V condition.